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| KTD1351 transistor (npn) features power dissipation p cm: 2 w (tamb=25 ) collector current i cm: 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a,i e =0 60 v collector-emitter breakdown voltage v(br) ceo ic= 50ma, i b =0 60 v emitter-base breakdown voltage v(br) ebo i e = 100 a , i c =0 7 v collector cut-off current i cbo v cb = 60v, i e =0 100 a emitter cut-off current i ebo v eb = 7v, i c =0 100 a dc current gain h fe v ce = 5v, i c = 0.5 a 60 300 collector-emitter saturation voltage v ce(sat) v ce =2a, i b =0.2a 1 v base-emitter voltage v be v ce = 5v, i c =0.5a 1 v transition frequency f t v ce =5v, i c =0.5a 2 mh z classification of h fe (1) rank o y gr range 60-120 100-200 150-300 1 2 3 to-220 1. base 2. collector 3. emitter KTD1351 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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